[IEEE International Electron Devices Meeting. IEDM...

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[IEEE International Electron Devices Meeting. IEDM Technical Digest - Washington, DC, USA (7-10 Dec. 1997)] International Electron Devices Meeting. IEDM Technical Digest - Two-dimensional borderless contact pad technology for a 0.135 μm/sup 2/ 4-gigabit DRAM cell

Koga, H., Matsuki, T., Kasai, N., Tatsumi, T., Hayashi, Y., Saito, Y., Nakajima, K., Tokunaga, K., Yamada, Y., Onoda, N., Tokashiki, K., Nishizawa, A., Kawamoto, H., Koyama, K.
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Year:
1997
Language:
english
DOI:
10.1109/iedm.1997.649444
File:
PDF, 603 KB
english, 1997
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