[IEEE International Electron Devices Meeting 1999. Technical Digest - Washington, DC, USA (5-8 Dec. 1999)] International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) - High voltage NPN-bipolar transistor using P/sup +/-buried layer in BiCMOS process
Jun-Lin Tsai,, Jei-Feng Huang,, Shih-Hui Chen,, Jeng Gong,, Ruey-Hsin Liou,, Shun-Liang Hsu,Year:
1999
Language:
english
DOI:
10.1109/iedm.1999.823876
File:
PDF, 198 KB
english, 1999