Experimental Study on Electron Mobility in...

IEEE Transactions on Nanotechnology 2013 / 07 Vol. 12; Iss. 4

Experimental Study on Electron Mobility in InxGa1-xAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors With In Content Modulation and MOS Interface Buffer Engineering

SangHyeon Kim,, Yokoyama, Masafumi, Taoka, Noriyuki, Iida, Ryo, Sung-Hoon Lee,, Nakane, Ryosho, Urabe, Yuji, Miyata, Noriyuki, Yasuda, Tetsuji, Yamada, Hisashi, Fukuhara, Noboru, Hata, Masahiko, Tak
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Volume:
12
Language:
english
Journal:
IEEE Transactions on Nanotechnology
DOI:
10.1109/tnano.2013.2265435
Date:
July, 2013
File:
PDF, 930 KB
english, 2013
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