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[IEEE 2000 International Conference on Simulation of Semiconductor Processes and Devices - Seattle, WA, USA (6-8 Sept. 2000)] 2000 International Conference on Simulation Semiconductor Processes and Devices (Cat. No.00TH8502) - Electron transport properties in novel orthorhombically-strained silicon material explored by the Monte Carlo method

Xin Wang,, Kencke, D.L., Liu, K.C., Tasch, A.F., Register, L.F., Banerjee, S.K.
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Year:
2000
Language:
english
DOI:
10.1109/sispad.2000.871209
File:
PDF, 297 KB
english, 2000
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