[IEEE 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA (11-14 Dec. 1994)] Proceedings of 1994 IEEE International Electron Devices Meeting - 200 mm process integration for a 0.15 μm channel-length CMOS technology using mixed X-ray/optical lithography
Subbanna, S., Ganin, E., Crabbe, E., Comfort, J., Wu, S., Agnello, P., Martin, B., McCord, M., Ng, H., Newman, T., McFarland, P., Sun, J., Snare, J., Acovic, A., Ray, A., Gehres, R., Schulz, R., GrecoYear:
1994
Language:
english
DOI:
10.1109/iedm.1994.383318
File:
PDF, 332 KB
english, 1994