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[IEEE ESSDERC 2012 - 42nd European Solid State Device Research Conference - Bordeaux, France (2012.09.17-2012.09.21)] 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC) - A gate-last In0.53Ga0.47As channel FinFET with Molybdenum source/drain contacts
Zhang, Xingui, Guo, Hua Xin, Gong, Xiao, Yeo, Yee-ChiaYear:
2012
Language:
english
DOI:
10.1109/essderc.2012.6343362
File:
PDF, 1.28 MB
english, 2012