[IEEE 2012 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) - Bangkok, Thailand (2012.12.3-2012.12.5)] 2012 IEEE International Conference on Electron Devices and Solid State Circuit (EDSSC) - Characteristics of ferromagnetic Schottky diodes on heavily n-doped GaN semiconductor
Adari, Rama, Banerjee, Debashree, Ganguly, Swaroop, Aldhaheri, Rabah W., Hussain, Mohammed A., Saha, DipankarYear:
2012
Language:
english
DOI:
10.1109/edssc.2012.6482839
File:
PDF, 512 KB
english, 2012