[IEEE 2009 10th International Conference on Ultimate Integration on Silicon (ULIS - Aachen, Germany (2009.03.18-2009.03.20)] 2009 10th International Conference on Ultimate Integration of Silicon - Interface oxide trap characterisation in germanium-on-insulator 0.12 μm PMOS transistors by drain current noise measurements
Gyani, J., Soliveres, S., Martinez, F., Valenza, M., Le Royer, C., Augendre, E., Romanjek, K., Drazek, CharlotteYear:
2009
Language:
english
DOI:
10.1109/ulis.2009.4897545
File:
PDF, 874 KB
english, 2009