[IEEE IC's (ISPSD) - San Diego, CA, USA (2011.05.23-2011.05.26)] 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs - 1.7kV trench IGBT with deep and separate floating p-layer designed for low loss, low EMI noise, and high reliability
Watanabe, So, Mori, Mutsuhiro, Arai, Taiga, Ishibashi, Kohsuke, Toyoda, Yasushi, Oda, Tetsuo, Harada, Takashi, Saito, KatsuakiYear:
2011
Language:
english
DOI:
10.1109/ispsd.2011.5890787
File:
PDF, 1.77 MB
english, 2011