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[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - High-performance InSb based quantum well field effect transistors for low-power dissipation applications
Ashley, T., Emeny, M. T., Hayes, D. G., Hilton, K. P., Jefferies, R., Maclean, J. O., Smith, S. J., Tang, A. W-H., Wallis, D. J., Webber, P. J.Year:
2009
Language:
english
DOI:
10.1109/iedm.2009.5424207
File:
PDF, 682 KB
english, 2009