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[IEEE 6th International Conference on Properties and Applications of Dielectric Materials - Xi'an, China (21-26 June 2000)] Proceedings of the 6th International Conference on Properties and Applications of Dielectric Materials (Cat. No.00CH36347) - DC breakdown properties of gate oxide in MOSFET
Jeong-Woo Song,, Neung-Pyo Hong,, Jong-Pil Lee,, Jong-Yeol Shin,, Wang-Kon Kim,, Jin-Woong Hong,Volume:
2
Year:
2000
Language:
english
DOI:
10.1109/icpadm.2000.876409
File:
PDF, 288 KB
english, 2000