First MOS transistors on insulator by silicon saturated...

IEEE Electron Device Letters 1992 / 05 Vol. 13; Iss. 5

First MOS transistors on insulator by silicon saturated liquid solution epitaxy

Zingg, R.P., Nagel, N., Bergmann, R., Bauser, E., Hofflinger, B., Queisser, H.J.
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Volume:
13
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.145058
Date:
May, 1992
File:
PDF, 385 KB
english, 1992
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