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[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - A novel 2-bit/cell nitride storage flash memory with greater than 1M P/E-cycle endurance
Yen-Mao Shih,, Hang-Ting Lue,, Kuang-Yeu Hsieh,, Liu, R., Chih-Yuan La,Year:
2004
Language:
english
DOI:
10.1109/iedm.2004.1419321
File:
PDF, 304 KB
english, 2004