[IEEE 19th International Symposium on Power Semiconductor Devices and IC's - Jeju, Korea (2007.05.27-2007.05.31)] Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's - Split-gate Resurf Stepped Oxide (RSO) MOSFETs for 25V applications with record low gate-to-drain charge
Goarin, P., Koops, G.E.J., van Dalen, R., Le Cam, C., Saby, J.Year:
2007
Language:
english
DOI:
10.1109/ispsd.2007.4294932
File:
PDF, 2.51 MB
english, 2007