One-Transistor-Capacitor (1TC) Structure of Non-Volatile...

Integrated Ferroelectrics 2013 / 01 Vol. 143; Iss. 1

One-Transistor-Capacitor (1TC) Structure of Non-Volatile Ferroelectric RAM Using 0.95(Na 0.5 Bi 0.5 )TiO 3 -0.05BaTiO 3 Thin Film

Chang, Wen-Chung, Wang, Chih-Yung, Chen, Kai-Huang, Cheng, Chien-Min
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Volume:
143
Language:
english
Journal:
Integrated Ferroelectrics
DOI:
10.1080/10584587.2013.795828
Date:
January, 2013
File:
PDF, 391 KB
english, 2013
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