A two-dimensional electrostatic model for degraded...

International Journal of Electronics 2001 / 05 Vol. 88; Iss. 5

A two-dimensional electrostatic model for degraded LDD-nMOSFETs including spatial and energy distribution of hot-carrier-induced interface traps

El-Sayed, M., Salah, N.
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Volume:
88
Language:
english
Journal:
International Journal of Electronics
DOI:
10.1080/00207210110035350
Date:
May, 2001
File:
PDF, 281 KB
english, 2001
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