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Preparation of low density poly(methylsilsesquioxane)s for LSI interlayer dielectrics with low dielectric constant. Fabrication of Ångstrom size pores prepared by baking trifluoropropylsilyl copolymers
Mikoshiba, Satoshi, Hayase, ShuziVolume:
9
Year:
1999
Language:
english
Journal:
Journal of Materials Chemistry
DOI:
10.1039/a807068g
File:
PDF, 247 KB
english, 1999