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Effect of Nitrogen on the Frequency Dependence of Dynamic NBTI-Induced Threshold-Voltage Shift of the Ultrathin Oxynitride Gate P-MOSFET
Wang, S., Diing Shenp Ang,, Du, G.A.Volume:
29
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2008.919793
Date:
May, 2008
File:
PDF, 166 KB
english, 2008