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[IEEE Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. - Honolulu, HI, USA (2004.06.17-2004.06.17)] Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. - Electron and hole mobility enhancements in sub-10 nm-thick strained silicon directly on insulator fabricated by a bond and etch-back technique
Aberg, I., Olubuyide, O.O., Chleirigh, C.N., Lauer, I., Antoniadis, D.A., Li, J., Hull, R., Hoyt, J.L.Year:
2004
Language:
english
DOI:
10.1109/vlsit.2004.1345388
File:
PDF, 187 KB
english, 2004