[IEEE International Technical Digest on Electron Devices - San Francisco, CA, USA (9-12 Dec. 1990)] International Technical Digest on Electron Devices - Optimum low-voltage silicon power switches fabricated using scaled trench MOS technologies
Shenai, K., Hennessy, W., Ghezzo, M., Korman, C., Chang, H., Temple, V., Adler, M.Year:
1990
Language:
english
DOI:
10.1109/iedm.1990.237042
File:
PDF, 356 KB
english, 1990