High Al-content AlGaN/GaN MODFETs for ultrahigh performance

IEEE Electron Device Letters 1998 / 02 Vol. 19; Iss. 2

High Al-content AlGaN/GaN MODFETs for ultrahigh performance

Wu, Y.-F., Keller, B.P., Fini, P., Keller, S., Jenkins, T.J., Kehias, L.T., Denbaars, S.P., Mishra, U.K.
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Volume:
19
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.658600
Date:
February, 1998
File:
PDF, 127 KB
english, 1998
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