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[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - High-Q torsional mode Si triangular beam resonators encapsulated using SiGe thin film

Naito, Y., Helin, P., Nakamura, K., De Coster, J., Guo, B., Haspeslagh, L., Onishi, K., Tilmans, H. A. C.
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Year:
2010
Language:
english
DOI:
10.1109/iedm.2010.5703313
File:
PDF, 328 KB
english, 2010
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