Doped Embedded $\hbox{Si}_{1 - x}\hbox{C}_{x}$ S/D...

IEEE Electron Device Letters 2008 / 11 Vol. 29; Iss. 11

Doped Embedded $\hbox{Si}_{1 - x}\hbox{C}_{x}$ S/D Stressors With up to 1.5% Substitutional Carbon Content Grown Using a Novel Deposition Process

Verheyen, Peter, Machkaoutsan, Vladimir, Bauer, Matthias, Weeks, Doran, Kerner, Christoph, Clemente, Francesca, Bender, Hugo, Shamiryan, Denis, Loo, Roger, Hoffmann, Thomas, Absil, Philippe, Biesemans
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Volume:
29
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2008.2005593
Date:
November, 2008
File:
PDF, 209 KB
english, 2008
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