A study of hydrogen passivation of grain boundaries in...

IEEE Transactions on Electron Devices 1989 / Jan. Vol. 36; Iss. 1

A study of hydrogen passivation of grain boundaries in polysilicon thin-film transistors

Faughnan, B., Ipri, A.C.
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Volume:
36
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/16.21188
Date:
January, 1989
File:
PDF, 663 KB
english, 1989
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