Carrier mobility in MOSFETs fabricated with Hf-Si-O-N gate...

IEEE Electron Device Letters 2002 / 10 Vol. 23; Iss. 10

Carrier mobility in MOSFETs fabricated with Hf-Si-O-N gate dielectric, polysilicon gate electrode, and self-aligned source and drain

Rotondaro, A.L.P., Visokay, M.R., Shanware, V.A., Chambers, J.J., Colombo, L.
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Volume:
23
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2002.803749
Date:
October, 2002
File:
PDF, 193 KB
english, 2002
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