Power performance of microwave high-electron mobility...

IEEE Electron Device Letters 1985 / 02 Vol. 6; Iss. 2

Power performance of microwave high-electron mobility transistors

Smith, P.M., Mishra, U.K., Chao, P.C., Palmateer, S.C., Hwang, J.C.M.
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Volume:
6
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/edl.1985.26052
Date:
February, 1985
File:
PDF, 232 KB
english, 1985
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