[IEEE 2009 International Workshop on Junction Technology (IWJT) - Kyoto, Japan (2009.06.11-2009.06.12)] 2009 International Workshop on Junction Technology - A comparative study of double gate MOSFET with asymmetric barrier heights at source/drain and the symmetric DG-SBFET
Du Xiong-Xiong,, Sun, Lei, Liu Xiao-Yan,, Han Ru-Qi,Year:
2009
Language:
english
DOI:
10.1109/iwjt.2009.5166217
File:
PDF, 456 KB
english, 2009