![](/img/cover-not-exists.png)
[IEEE 2006 International Conference on Simulation of Semiconductor Processes and Devices - Monterey, CA, USA (2006.09.6-2006.09.8)] 2006 International Conference on Simulation of Semiconductor Processes and Devices - Ab initio calculation of As-vacancy deactivation and interstitial-mediated As diffusion in strained Si
Kim, Yonghyun, Hwang, Gyeong, Banerjee, SanjayYear:
2006
Language:
english
DOI:
10.1109/sispad.2006.282843
File:
PDF, 4.39 MB
english, 2006