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[IEEE 2001 International Semiconductor Device Research Symposium. Symposium - Washington, DC, USA (5-7 Dec. 2001)] 2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) - Metallization options and annealing temperatures for low contact resistance ohmic contacts to n-type GaSb
Ikossi, K., Goldenberg, M., Mittereder, J.Year:
2001
Language:
english
DOI:
10.1109/isdrs.2001.984488
File:
PDF, 323 KB
english, 2001