Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As/GaAs...

IEEE Electron Device Letters 1997 / 04 Vol. 18; Iss. 4

Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As/GaAs pseudomorphic doped-channel FET with high-current density and high-breakdown voltage

Yo-Sheng Lin,, Tai-Ping Sun,, Shey-Shi Lu,
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Volume:
18
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/55.563312
Date:
April, 1997
File:
PDF, 146 KB
english, 1997
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