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An investigation of the origins of the variable proton tolerance in multiple SiGe HBT BiCMOS technology generations
Cressler, J.D., Krithivasan, R., Zhang, G., Niu, G., Marshall, P.W., Kim, H.S., Reed, R.A., Palmer, M.J., Joseph, A.J.Volume:
49
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/tns.2002.805362
Date:
December, 2002
File:
PDF, 394 KB
english, 2002