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[IEEE 2006 International Conference on Simulation of Semiconductor Processes and Devices - Monterey, CA, USA (2006.09.6-2006.09.8)] 2006 International Conference on Simulation of Semiconductor Processes and Devices - Modeling of Electron Mobility Degradation for HfSiON MISFETs
Tanimoto, Hiroyoshi, Kondo, Masaki, Enda, Toshiyuki, Aoki, Nobutoshi, Iijima, Ryosuke, Watanabe, Takeshi, Takayanagi, Mariko, Ishiuchi, HidemiYear:
2006
Language:
english
DOI:
10.1109/sispad.2006.282835
File:
PDF, 3.99 MB
english, 2006