[IEEE 2009 10th International Conference on Ultimate Integration on Silicon (ULIS - Aachen, Germany (2009.03.18-2009.03.20)] 2009 10th International Conference on Ultimate Integration of Silicon - Modeling effect of Negative Bias Temperature Instability on potential distribution and degradation of double-gate MOSFETs
Ghobadi, Nayereh, Afzali-Kusha, Ali, Asl-Soleimani, EbrahimYear:
2009
Language:
english
DOI:
10.1109/ulis.2009.4897598
File:
PDF, 611 KB
english, 2009