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[IEEE 2010 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2010.12.6-2010.12.8)] 2010 International Electron Devices Meeting - CxFET: A novel steep subthreshold swing CMOS featuring a tunnel-injection bipolar transistor and MOSFET device complex
Hisamoto, Digh, Saito, Shin-ichi, Shima, Akio, Yoshimoto, Hiroyuki, Torii, Kazuyoshi, Takeda, EijiYear:
2010
Language:
english
DOI:
10.1109/iedm.2010.5703333
File:
PDF, 241 KB
english, 2010