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[IEEE IC's (ISPSD) - Orlando, FL, USA (2008.05.18-2008.05.22)] 2008 20th International Symposium on Power Semiconductor Devices and IC's - Feasibility study of a junction termination using deep trench isolation technique for the realization of DT-SJMOSFETs
Mahfoz-Kotb, H., Theolier, L., Morancho, F., Isoird, K., Dubreuil, P., Do Conto, T.Year:
2008
Language:
english
DOI:
10.1109/ispsd.2008.4538959
File:
PDF, 329 KB
english, 2008