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[IEEE 2012 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) - Bangkok, Thailand (2012.12.3-2012.12.5)] 2012 IEEE International Conference on Electron Devices and Solid State Circuit (EDSSC) - Numerical study on dual material gate nanowire tunnel field-effect transistor
Aixi Zhang,, Jinhe Mei,, Zhang, Lining, Hongyu He,, He, Jin, Chan, MansunYear:
2012
Language:
english
DOI:
10.1109/edssc.2012.6482880
File:
PDF, 175 KB
english, 2012