[IEEE 2013 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) - Hong Kong, Hong Kong (2013.06.3-2013.06.5)] 2013 IEEE International Conference of Electron Devices and Solid-state Circuits - Capacitance-Voltage characterization of InAsySb1−y XOI FET
Alam, Md. Nur Kutubul, Islam, Muhammad Shaffatul, Islam, Md. RaifqulYear:
2013
Language:
english
DOI:
10.1109/edssc.2013.6628046
File:
PDF, 1.15 MB
english, 2013