An ultra-low noise cryogenic Ka-Band InGaAs/InAlAs/InP HEMT...

IEEE Microwave and Guided Wave Letters 1994 / 10 Vol. 4; Iss. 10

An ultra-low noise cryogenic Ka-Band InGaAs/InAlAs/InP HEMT front-end receiver

Lai, R., Bautista, J.J., Fujiwara, B., Tan, K.L., Ng, G.I., Dia, R.M., Streit, D., Liu, P.H., Freudenthal, A., Laskar, J., Pospieszalski, M.W.
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Volume:
4
Language:
english
Journal:
IEEE Microwave and Guided Wave Letters
DOI:
10.1109/75.324706
Date:
October, 1994
File:
PDF, 304 KB
english, 1994
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