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[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - Physical model of the PBTI and TDDB of la incorporated HfSiON gate dielectrics with pre-existing and stress-induced defects
Sato, M., Umezawa, N., Shimokawa, J., Arimura, H., Sugino, S., Tachibana, A., Nakamura, M., Mise, N., Kamiyama, S., Morooka, T., Eimori, T., Shiraishi, K., Yamabe, K., Watanabe, H., Yamada, K., AoyamaYear:
2008
Language:
english
DOI:
10.1109/iedm.2008.4796629
File:
PDF, 340 KB
english, 2008