[IEEE 2011 69th Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2011.06.20-2011.06.22)] 69th Device Research Conference - Uniaxially tensile strained accumulation-mode gate-all-around Si nanowire nMOSFETs
Najmzadeh, Mohammad, Bouvet, Didier, Grabinski, Wladek, Ionescu, Adrian M.Year:
2011
Language:
english
DOI:
10.1109/drc.2011.5994458
File:
PDF, 1.02 MB
english, 2011