[IEEE IEEE InternationalElectron Devices Meeting, 2005....

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[IEEE IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - Tempe, Arizon, USA (Dec. 5, 2005)] IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest. - High performance 30 nm gate bulk CMOS for 45 nm node with σ-shaped SiGe-SD

Ohta, H., Kim, Y., Shimamune, Y., Sakuma, T., Hatada, A., Katakami, A., Soeda, T., Kawamura, K., Kokura, H., Morioka, H., Watanabe, T., Oh, J., Hayami, Y., Ogura, J., Tajima, M., Mori, T., Tamura, N.,
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Year:
2005
Language:
english
DOI:
10.1109/iedm.2005.1609316
File:
PDF, 268 KB
english, 2005
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