[IEEE 2006 European Solid-State Device Research Conference - Montreux, Switzerland (2006.09.19-2006.09.21)] 2006 European Solid-State Device Research Conference - Ultra-Thin-Body P-MOSFET Featuring Silicon-Germanium Source/Drain Stressors With High Germanium Content Formed by Local Condensation
Chui, King-jien, Ang, Kah-wee, Madan, Anuj, Du, Anyan, Tung, Chih-hang, Balasubramanian, Narayanan, Samudra, Ganesh, Yeo, Yee-chiaYear:
2006
Language:
english
DOI:
10.1109/essder.2006.307644
File:
PDF, 2.65 MB
english, 2006