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[IEEE 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - Naples, Italy (04-08 June 2006)] 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - Helium implantation in silicon: detailed experimental analysis of resistivity and lifetime profiles as a function of the implantation dose and energy
Daliento, S., Mele, L., Spirito, P., Gialanella, L., Romano, M., Limata, B.N., Carta, R., Bellemo, L.Year:
2006
Language:
english
DOI:
10.1109/ispsd.2006.1666094
File:
PDF, 3.48 MB
english, 2006