[IEEE International Electron Devices Meeting 1998. Technical Digest - San Francisco, CA, USA (6-9 Dec. 1998)] International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) - A new DRAM cell technology using merged process with storage node and memory cell contact for 4 Gb DRAM and beyond
Yoon-Soo Chun,, Byung-Jun Park,, Gi-Tae Jeong,, Yoo-Sang Hwang,, Kyu-Hyun Lee,, Hong-Sik Jeong,, Tae-Young Jung,, Kinam Kim,Year:
1998
Language:
english
DOI:
10.1109/iedm.1998.746372
File:
PDF, 1.11 MB
english, 1998