Significantly improved performance of MOSFETs on silicon...

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IEEE Electron Device Letters

Significantly improved performance of MOSFETs on silicon carbide using the 15R-SiC polytype

R. Schomer, P. Friedrichs, D. Peters, D. Stephani
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Language:
english
DOI:
10.1109/55.761027
File:
PDF, 63 KB
english
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