[IEEE 2010 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010) - Bologna, Italy (2010.09.6-2010.09.8)] 2010 International Conference on Simulation of Semiconductor Processes and Devices - A comparative 3D simulation approach with extensive experimental Vt/Avt data and analysis of LER/RDF/reliability of CMOS SRAMs at 40-nm node and beyond
Okada, Takako, Yoshimura, Hisao, Aikawa, Hisashi, Sengoku, Mitsuhiro, Fujii, Osamu, Oyamatsu, HisatoYear:
2010
Language:
english
DOI:
10.1109/sispad.2010.5604551
File:
PDF, 497 KB
english, 2010