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[IEEE 2009 IEEE International Memory Workshop (IMW) - Monterey, CA, USA (2009.05.10-2009.05.14)] 2009 IEEE International Memory Workshop - A Novel Fluorine Incorporated Band Engineered (BE) Tunnel (SiO2/ HfSiO/ SiO2) TANOS with Excellent Program/Erase & Endurance to 10^5 Cycles
Verma, Sarves, Bersuker, Gennadi, Gilmer, David C., Padovani, Andrea, Park, H., Nainani, Aneesh, Heh, Dawei, Huang, Jeff, Jiang, Jack, Parat, Krishna, Kirsch, Paul D., Larcher, Luca, Tseng, Hsing-HuanYear:
2009
Language:
english
DOI:
10.1109/imw.2009.5090575
File:
PDF, 988 KB
english, 2009