Thermally-activated degradation of InGaN-based laser...

Microelectronics Reliability 2014 / 09 Vol. 54; Iss. 9-10

Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage

De Santi, C., Meneghini, M., Marioli, M., Buffolo, M., Trivellin, N., Weig, T., Holc, K., Köhler, K., Wagner, J., Schwarz, U.T., Meneghesso, G., Zanoni, E.
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Volume:
54
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2014.07.073
Date:
September, 2014
File:
PDF, 957 KB
english, 2014
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