Flexible Three-Bit-Per-Cell Resistive Switching Memory...

IEEE Electron Device Letters 2013 / 10 Vol. 34; Iss. 10

Flexible Three-Bit-Per-Cell Resistive Switching Memory Using a-IGZO TFTs

Wu, Shih-Chieh, Feng, Hsien-Tsung, Yu, Ming-Jiue, Wang, I-Ting, Hou, Tuo-Hung
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Volume:
34
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2013.2278098
Date:
October, 2013
File:
PDF, 978 KB
english, 2013
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