A quantitative study of Phosphorous implantation damage on...

Microelectronics Reliability 2014 / 09 Vol. 54; Iss. 9-10

A quantitative study of Phosphorous implantation damage on the thick gate oxide of the 28nm node

Wan, Xinggong, Chandrashekhar, Sandhya, Bayha, Boris, Trentzsch, Martin, Balzer, Torben, Siddabathula, Mahesh, Aubel, Oliver
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Volume:
54
Language:
english
Journal:
Microelectronics Reliability
DOI:
10.1016/j.microrel.2014.07.074
Date:
September, 2014
File:
PDF, 985 KB
english, 2014
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